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AI news · Nvidia · memory

Samsung turns to TSMC for part of Nvidia’s custom memory

Nvidia reportedly wants all three of its memory suppliers to build one layer of its custom AI memory the same way, on TSMC’s 3-nanometre process.

By Alexandre S. , 04:00 UTC

Samsung has agreed to use rival chipmaker TSMC to build part of Nvidia’s next custom AI memory, Seoul Economic Daily reported on Monday 19 October 2026. The memory is HBM (high-bandwidth memory): stacks of memory chips that sit right beside an AI processor and feed it data.

Retro-futurist illustration: a striped sunset over a grid horizon under a starry sky, with a chip motif standing on the horizon.
Drawn by adtestbench from “[Exclusive] Samsung Electronics to Build Next-Generation HBM With TSMC”,

Nvidia unveiled its own design, NVHBM, in August. It has now asked its three suppliers, Micron, SK hynix and Samsung, to make the bottom logic layer of each stack (the base die) on TSMC’s 3-nanometre process. The memory layers above must use the same sixth-generation DRAM process. One shared process gives Nvidia matching parts from all three suppliers.

For Samsung this is a first. It has always made both layers itself, and until now any HBM work with TSMC stopped at packaging, the paper says. For standard HBM and other customers’ custom chips, such as AMD’s, Samsung still does everything itself.

Nvidia says NVHBM moves up to 30 per cent more data than standard HBM4E memory, Wccftech reports. It also uses up to 15 per cent less power. If TSMC cannot make enough base dies, Samsung is checking whether its own factories could fill the gap.

Memory is one of the scarcest parts of an AI server, and this decides how Nvidia’s next custom supply of it gets built.